[A Case of Peritoneal Metastasis Resection from GIST of the Small Intestine with Focal Resistance Against Imatinib Mesylate].

A 69-year-old man was referred to our institute for the surgical resection of focal resistant peritoneal GIST during imatinib administration. He had been diagnosed with GIST of the small intestine with liver and peritoneal metastases, and imatinib treatment was initiated. Shortly after imatinib administration, the primary lesion perforated, and thus, partial resection of the small intestine was performed.

Thiolate-Protected Trimetallic AuAgPd and AuAgPt Alloy Clusters with Controlled Chemical Composition and Metal Positions.

The mixing of heteroelements in metal clusters is a powerful approach to generate new physical/chemical properties and functions. However, as the kinds of elements increase, control of the chemical composition and geometric structure becomes difficult. We succeeded in the compositionally selective synthesis of phenylethanethiolate-protected trimetallic AuAgPd and AuAgPt clusters, AuAgPd(SCHPh) and AuAgPt(SCHPh).

Tuning the electronic structure of thiolate-protected 25-atom clusters by co-substitution with metals having different preferential sites.

Trimetallic AuAgPd and tetrametallic AuAgCuPd clusters were synthesized by the subsequential metal exchange reactions of dodecanethiolate-protected AuPd clusters. EXAFS measurements revealed that Pd, Ag, and Cu dopants preferentially occupy the center and edge sites of the core, and staple sites, respectively. Spectroscopic and theoretical studies demonstrated that the synergistic effects of multiple substitutions on the electronic structures are additive in nature.

Boron δ-doped (111) diamond solution gate field effect transistors.

A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET.