Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces.

Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer.

Detection of In-Plane Movement in Electrically Actuated Microelectromechanical Systems Using a Scanning Electron Microscope.

The measurement of in-plane motion in microelectromechanical systems (MEMS) is a challenge for existing measurement techniques due to the small size of the moving devices and the low amplitude of motion. This paper studied the possibility of using images obtained using a scanning electron microscope (SEM) together with existing motion detection algorithms to characterize the motion of MEMS. SEM imaging has previously been used to detect motion in MEMS device.