Serum interleukin-33 (IL-33) in children with active systemic lupus erythematosus: A cross-sectional study.

Interleukin-33 (IL-33) is a member of the IL-1 cytokine family and is associated with the development of different autoimmune diseases as systemic lupus erythematosus (SLE). So, the purpose of this cross-sectional study was to measure the serum IL-33 in children with SLE (c-SLE) in relation to their SLE disease activity index. This study was conducted upon 50 c-SLE patients in comparison to 50 normal matched children as a control group.

Fractional carbon dioxide laser-assisted delivery of lyophilized-growth factors is a promising treatment modality of post-acne scars.

Lyophilized-growth factors (L-GFs), is a new platelet rich plasma (PRP) preparation that is standardized in growth factors concentrations. The aim of this study was to compare the therapeutic efficacy of ablative fractional CO laser in combination with L-GFs vs PRP in post-acne scars. This study was conducted on 45 patients presented with facial post-acne scars.

WSe Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.

In this paper, electrostatically configurable 2D tungsten diselenide (WSe ) electronic devices are demonstrated. Utilizing a novel triple-gate design, a WSe device is able to operate as a tunneling field-effect transistor (TFET), a metal-oxide-semiconductor field-effect transistor (MOSFET) as well as a diode, by electrostatically tuning the channel doping to the desired profile. The implementation of scaled gate dielectric and gate electrode spacing enables higher band-to-band tunneling transmission with the best observed subthreshold swing (SS) among all reported homojunction TFETs on 2D materials.

Complementary Black Phosphorus Tunneling Field-Effect Transistors.

Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, which results intrinsically in sub-threshold swings of at least 60 mV/dec at room temperature. Here, we demonstrate complementary TFETs based on few-layer black phosphorus, in which multiple top gates create electrostatic doping in the source and drain regions. By electrically tuning the doping types and levels in the source and drain regions, the device can be reconfigured to allow for TFET or MOSFET operation and can be tuned to be n-type or p-type.

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system.

Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last four decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design.

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m(*)) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.