Patternable Process-Induced Strain in 2D Monolayers and Heterobilayers.

Strain engineering in two-dimensional (2D) materials is a powerful but difficult to control approach to tailor material properties. Across applications, there is a need for device-compatible techniques to design strain within 2D materials. This work explores how process-induced strain engineering, commonly used by the semiconductor industry to enhance transistor performance, can be used to pattern complex strain profiles in monolayer MoS and 2D heterostructures.

An Atomistic Insight into Moiré Reconstruction in Twisted Bilayer Graphene beyond the Magic Angle.

Twisted bilayer graphene exhibits electronic properties strongly correlated with the size and arrangement of moiré patterns. While rigid rotation of the two graphene layers results in a moiré interference pattern, local rearrangements of atoms due to interlayer van der Waals interactions result in atomic reconstruction within the moiré cells. Manipulating these patterns by controlling the twist angle and externally applied strain provides a promising route to tuning their properties.

Strain-based room-temperature non-volatile MoTe ferroelectric phase change transistor.

The primary mechanism of operation of almost all transistors today relies on the electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on' state to a non-conducting 'off' state. As transistors continue to scale down to increase computational performance, physical limitations from nanoscale field-effect operation begin to cause undesirable current leakage, which is detrimental to the continued advancement of computing. Using a fundamentally different mechanism of operation, we show that through nanoscale strain engineering with thin films and ferroelectrics the transition metal dichalcogenide MoTe can be reversibly switched with electric-field-induced strain between the 1T'-MoTe (semimetallic) phase to a semiconducting MoTe phase in a field-effect transistor geometry.