Publications by authors named "Tanmoy Basu"

Lithium niobate (LN) stands out as a versatile nonlinear optoelectronic material which can be directly applied in tunable modulators, filters, parametric amplifiers, and photonic integrated circuits. Recently, LN photonic crystals have garnered attention as a compelling candidate for incorporation into photonic integrated circuits, showcasing their potential in advancing the field. Photonic crystals possess a widely acknowledged capability to manipulate the transmission of light modes, similar to how nanostructures have been utilized to regulate electron-related phenomena.

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A new type of ion source is being developed for proton beam writing and other focused ion beam applications. The potential of this source as well as achieved performance of the nano aperture ion source will be evaluated. Based on the ideal source parameters, critical geometrical parameters constraining chromatic aberrations and a possible pathway to achieve this performance will be presented.

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Self-organized pattern evolution on SiO surface under low energy Ar-ion irradiation has been investigated extensively at varied ion energies, angles of ion incidence, and ion flux. Our investigations reveal an instability on SiO surface in an angular window of 40° ̶ 70° and for a comprehensive range of Ar-ion energies (200-1000 eV). Different topographical features, viz.

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Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.

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Unlabelled: Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness.

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In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2.

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