The monoclinic gadolinium sesquioxide (denoted as m-GdO) with its lower crystal symmetry exhibits larger dielectric permittivity () than the cubic GdO (denoted as c-GdO). Recently, a few nanometers thick m-GdO thin film has been successfully epitaxially grown on a GaN substrate as a promising candidate gate oxide in metal-oxide-semiconductor field-effect transistors (MOSFETs). Thus, it is important to understand the electronic excitations in m-GdO and investigate them by electron energy loss spectroscopy (EELS) performed with aloof electron beams and electron diffraction to gain the spatial and momentum resolutions.
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