Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO Memristive Devices.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO Memristive Devices.

Recent developments in artificial intelligence technology has facilitated advances in neuromorphic computing. Electrical elements mimicking the role of synapses are crucial building blocks for neuromorphic computers. Although various types of two-terminal memristive devices have emerged in the mainstream of synaptic devices, a hetero-synaptic artificial synapse, i.

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO single crystals.

Resistive switching (RS) was demonstrated in four-terminal planar memristive devices fabricated on reduced TiO (TiO) single crystal substrates. In the device, a pair of diagonally opposing electrode terminals is used to modify the distribution of oxygen vacancies in the region between another pair of diagonally opposing electrode terminals. This allowed microscopic visual observations of the oxygen vacancy distribution based on electrocoloring.

Atomic-scale analysis on the role of molybdenum in iron-catalyzed carbon nanotube growth.

We have elucidated the synergetic role played by molybdenum in iron-catalyzed chemical vapor deposition growth of carbon nanotubes (CNTs) by in situ environmental transmission electron microscopy. Molybdenum can be well accommodated by Fe-based carbide nanoparticle catalysts of M(23)C(6)-type structure (M = Fe and Mo). We have also shown that molybdenum suppresses the nucleation of iron compounds that are known to exhibit no catalytic activity for the growth of CNTs.