Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature.

We have synthesized inverse-perovskite-type oxysilicides and oxygermanides represented by SiO and GeO ( = Ca and Sr) and studied their characteristics in the search for nontoxic narrow band gap semiconductors. These compounds exhibit a sharp absorption edge around 0.9 eV and a luminescence peak in the same energy range.

Ethanol Gas Sensing by a Zn-Terminated ZnO(0001) Bulk Single-Crystalline Substrate.

Metal oxide semiconductor gas sensors have been widely studied for the selective detection of various gases with trace concentrations. The identification of the reaction scheme governing the gas sensing response is crucial for further development; however, the mechanism of ethanol (EtOH) gas sensing by ZnO is still controversial despite being one of the most intensively studied target gas and sensing material combinations. In this work, for the first time, the detailed mechanism of EtOH sensing by ZnO is studied by using a bulk single-crystalline substrate, which has a well-defined stoichiometry and atomic arrangement, as the sensing material.

Structure and Electron Mobility of ScN Films Grown on α-Al₂O₃(1 1 ¯ 02) Substrates.

Scandium nitride (ScN) films were grown on α-Al₂O₃( 1 1 ¯ 02 ) substrates using the molecular beam epitaxy method, and the heteroepitaxial growth of ScN on α-Al₂O₃( 1 1 ¯ 02 ) and their electric properties were studied. Epitaxial ScN films with an orientation relationship (100)ScN || ( 1 1 ¯ 02 )α-Al₂O₃ and [001]ScN || [ 11 2 ¯ 0 ]α-Al₂O₃ were grown on α-Al₂O₃( 1 1 ¯ 02 ) substrates. Their crystalline orientation anisotropy was found to be small.