Sublattice Dependence and Gate Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer Graphene.

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable band gap, the existence of midgap states induced by dopants or adatoms has been investigated theoretically and observed indirectly in electron transport experiments. Here, we characterize BLG midgap states in real space, with atomic-scale resolution with scanning tunneling microscopy and spectroscopy.