Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-GaO(001).

We investigated atomic site occupancy for the Si dopant in Si-doped κ-GaO(001) using photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and PEH, we found that the Si dopant had one chemical state, and three types of inequivalent Si substitutional sites (Si) were formed. The ratios for the inequivalent tetrahedral, pentahedral, and octahedral Si sites were estimated to be 55.