Temperature Dependence of Alternating Current Impedance in -Type Si/B-Doped -Type Ultrananocrystalline Diamond Heterojunctions Produced Through Pulsed Laser Deposition.

In the present research, heterojunctions comprised of -type Si wafer substrates and B-doped -type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were produced successfully by using pulsed laser deposition. Their alternating current impedance characteristics, under various frequencies, were measured and studied as a function of temperature in the range 200 to 400 K. Both the real (') and imaginary (″) parts of the complex impedance were temperature dependent.

and Characteristics of -Type Si/B-Doped -Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition.

-Type Si/-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance-voltage-frequency () and conductance-voltage-frequency () plots, the series resistance () values at zero bias voltage were 154.41 Ω at 2 MHz and 1.

Diode Parameters of Heterojunctions Comprising -Type Ultrananocrystalline Diamond Films and -Type Si Substrates.

In the current research, heterojunctions comprising -type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and -type Si substrates were formed via pulsed laser deposition. To extract their junction parameters via thermionic emission (TE) theory and Norde model, the measurement of dark current density-voltage curves was carried out under various temperatures ranging from 300 to 60 K. Through TE theory, the ideality factor values at 300 K and 60 K were 2.