Publications by authors named "Takahito Terashima"

Perovskite oxides O continue to be a major focus in materials science. Of particular interest is the interplay between and cations as exemplified by intersite charge transfer (ICT), which causes novel phenomena including negative thermal expansion and metal-insulator transition. However, the ICT properties were achieved and optimized by cationic substitution or ordering.

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Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer these wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. Here, we discover a simple method to fabricate atomic-scale wires with various arrangements, including stripes, X-junctions, Y-junctions, and nanorings.

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Controlling oxygen deficiencies is essential for the development of novel chemical and physical properties such as high- superconductivity and low-dimensional magnetic phenomena. Among reduction methods, topochemical reactions using metal hydrides (e.g.

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We report the epitaxial thin-film synthesis of SrCuO with infinitely stacked CuO layers composed of edge-sharing CuO square planes, using molecular-beam epitaxy. Experimental and theoretical characterizations showed that this material is a metastable phase that can exist by applying tensile biaxial strain from the (001)-SrTiO substrate. SrCuO shows an insulating electrical resistivity in accordance with the Cu valence state revealed by X-ray photoelectron spectroscopy.

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We achieve the introduction of an extremly large amount of interstitial hydrogen into strontium titanate (SrTiO) by low-temperature hydrogen ion beam irradiation. The in situ transport measurements reveal an unprecedented thermal hysteresis of the resistivity.

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Epitaxial thin films of titanium perovskite oxyhydride ATiO(3-x)H(x) (A = Ba, Sr, Ca) were prepared by CaH(2) reduction of epitaxial ATiO(3) thin films deposited on a (LaAlO(3))(0.3)(SrAl(0.5)Ta(0.

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Charge doping of iron-pnictide superconductors leads to collective pinning of flux vortices, whereas isovalent doping does not. Moreover, flux pinning in the charge-doped compounds is consistently described by the mean-free path fluctuations introduced by the dopant atoms, allowing for the extraction of the elastic quasiparticle scattering rate. The absence of scattering by dopant atoms in isovalently doped BaFe2(As(1-x)P(x))(2) is consistent with the observation of a linear temperature dependence of the low-temperature penetration depth in this material.

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