CrO thin films were grown on a Si (1 0 0) substrate using Cr(thd) and O by atomic layer deposition (ALD) at substrate temperatures () from 200 to 300 °C. X-ray amorphous films were deposited at a ≤ 225 °C, whereas at higher temperatures ( ≥ 250 °C), the eskolaite phase was observed in the films. The growth rate of the films increased from 0.
View Article and Find Full Text PDFCoatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO doped with AlO were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD). The mainly amorphous 60-80 nm thick films consisted Al in the range of 2 to 26 at.
View Article and Find Full Text PDFSiO films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO films. On the top of the graphene layer, either continuous HfO or SiO films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively.
View Article and Find Full Text PDFMechanical properties of thin films are significant for the applicability of nanodevices. Amorphous AlO-TaO double and triple layers were atomic layer-deposited to the thickness of 70 nm with constituent single-layer thicknesses varying from 40 to 23 nm. The sequence of layers was alternated and rapid thermal annealing (700 and 800 °C) was implemented on all deposited nanolaminates.
View Article and Find Full Text PDFChromium (III) oxide is a technologically interesting material with attractive chemical, catalytic, magnetic and mechanical properties. It can be produced by different chemical and physical methods, for instance, by metal-organic chemical vapor deposition, thermal decomposition of chromium nitrate Cr(NO) or ammonium dichromate (NH)CrO, magnetron sputtering and atomic layer deposition. The latter method was used in the current work to deposit CrO thin films with thicknesses from 28 to 400 nm at deposition temperatures from 330 to 465 °C.
View Article and Find Full Text PDFDouble layered stacks of ZrO and SnO films, aiming at the synthesis of thin magnetic and elastic material layers, were grown by atomic layer deposition to thicknesses in the range of 20-25 nm at 300 °C from ZrCl, SnI, HO, and O as precursors. The as-deposited nanostructures consisted of a metastable tetragonal polymorph of ZrO, and a stable tetragonal phase of SnO, with complementary minor reflections from the orthorhombic polymorph of SnO. The hardness and elastic modulus of the stacks depended on the order of the constituent oxide films, reaching 15 and 171 GPa, respectively, in the case of top SnO layers.
View Article and Find Full Text PDFDue to the several applications of biosensors, such as magnetic hyperthermia and magnetic resonance imaging, the use of superparamagnetic nanoparticles or thin films for preparing biosensors has increased greatly. We report herein on a strategy to fabricate a nanostructure composed of superparamagnetic thin films. Ruthenium-doped iron oxide thin films were deposited by using atomic layer deposition at 270 and 360 °C.
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