Epitaxial CuO Thin Films Deposited from Solution: the Enabling Role of Cu Diffusion into the GaAs Substrate.

Cuprous oxide (CuO) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates.