Publications by authors named "Tairan Hu"

Article Synopsis
  • - Stacked SiGe/Si structures are essential for gate-all-around nanowire transistors (GAA NWTs), which may improve upon current fin field effect transistor (FinFET) technologies as devices continue to shrink in size.
  • - The study emphasizes two critical processes in GAA nano-scale transistors: the conformal deposition of inner spacer films and their precise etching, utilizing low pressure chemical vapor deposition (LPCVD) for optimal filling.
  • - Results indicate that the silicon nitride inner spacer demonstrates exceptional etch selectivity and anisotropy, crucial for overcoming challenges in manufacturing nano-transistors at scales smaller than 5 nm.
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Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained.

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Cancer-associated fibroblasts (CAFs) are activated fibroblasts and can interact with cancer cells to promote tumor progression. The process of how tumor cells reprogram normal fibroblasts (NFs) to tumor-promoting CAFs regulated by long non-coding RNA (lncRNA) remains incompletely understood. The tumor cells-released exosomes can induce reprogramming of NFs into CAFs.

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