Effectiveness and Feasibility of Digital Pulmonary Rehabilitation in Patients Undergoing Lung Cancer Surgery: Systematic Review and Meta-Analysis.

Background: Pulmonary rehabilitation (PR) has been shown to effectively support postsurgical recovery in patients with lung cancer (LC) at various stages. While digital PR programs offer a potential solution to traditional challenges, such as time and space constraints, their efficacy and feasibility for patients undergoing LC surgery remain unclear.

Objective: This systematic review aims to assess the feasibility and effectiveness of digital PR programs for individuals undergoing LC surgery.

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications.

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, and is an indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, and the devices detected by medium-wave UV light generally have problems such as low detection rate, low sensitivity, and poor stability, which are difficult to meet the market application needs. Herein, Cs-Cu-I films with mixed-phase have been prepared by vacuum thermal evaporation.

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGaO heterojunction with high sensitivity and fast speed.

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGaO has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.

Pressure-induced distinct excitonic properties of 2D perovskites with isomeric organic molecules for spacer cations.

Spacer organic cations in two-dimensional (2D) perovskites play vital roles in inducing structural distortion of the inorganic components and dominating unique excitonic properties. However, there is still little understanding of spacer organic cations with identical chemical formulas, and different configurations have an impact on the excitonic dynamics. Herein, we investigate and compare the evolution of the structural and photoluminescence (PL) properties of [CH(CH)NH]PbI ((PA)PbI) and [(CH)CH(CH)NH]PbI ((PNA)PbI) with isomeric organic molecules for spacer cations by combining steady-state absorption, PL, Raman and time-resolved PL spectra under high pressures.

Smart Adhesives via Magnetic Actuation.

Smart adhesives possess a wide range of applications owing to their reversibly and repeatedly switchable adhesion in transfer technology. Despite recent advances, it still remains a technical and scientific challenge to achieve strategies for rapidly tunable adhesion in a noncontact manner. In this study, a smart adhesive to achieve dynamically tunable adhesion is developed.

Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.

Three InGaN/GaN quantum well (QW) samples with different barrier thickness (Sample A: 15 nm, Sample B: 17.5 nm, and Sample C: 20 nm) were grown a metal organic chemical vapor deposition (MOCVD) system. The InGaN/GaN QWs became QD/QW hybrid structures due to the high density of V-shaped pits (VPs), which cut the InGaN wells into InGaN quantum dots (QDs) and indium-rich (In-rich) QDs stemming from the indium phase separation.

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs.

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top -plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes.

Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission.

Aggregation-caused quenching (ACQ) effect, known as the main cause to restrain solid-state luminescence of carbon quantum dots (CQDs), hinders further application of CQDs in white light-emitting diodes (WLED). Here, a complex of CQDs and phthalimide crystals (CQDs/PC) was prepared through a one-step solvothermal method. CQDs/PC prevented CQDs from touching directly by embedding the CQDs in phthalimide crystal matrix in situ, which effectively reduced the ACQ effect.

InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes.

In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101̅1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for InGaN and 151 meV for InGaN).

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N/H-Grown GaN Barrier.

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H increases from 0 to 6.

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity.

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.

InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy.

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth.

Investigation of temperature-dependent photoluminescence in multi-quantum wells.

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation.

Temperature-dependent photoluminescence in light-emitting diodes.

Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier transport and localized states in semiconductor materials. Resonant excitation and non-resonant excitation are the two primary methods of researching this issue. In this study, the application ranges of the different excitation modes are confirmed by analysing the TDPL characteristics of GaN-based light-emitting diodes.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA.

[Research on activities of drugs by use of an optical nitric oxide biosensor].

Objective: To develop an Optical Nitric Oxide Biosensor and investigate the activities of drugs that stimulate macrophage to produce nitric oxide.

Methods: An NO biosensor was built on Cyt C which had been immobilized by Al2O3/SiO2 sol-gel procedure. Then the biosensor's characteristics in response to nitric oxide were studied by UV.

[Superoxide dismutase biosensor for screening substances possessing scavenging superoxide anion activity].

Aim: To establish a method for screening active substance with scavenging effects on superoxide anion in vitro by designed superoxide dismutase biosensor.

Methods: The enzyme sensor was built by connecting the immobilized CuZnSOD with optical oxygen sensor through a special way. Superoxide anions were generated by auto-oxidation of pyrogallol.

[Optical oxygen sensor based on a sol-gel encapsulation method].

Objective: To develop oxygen sensor by use of sol-gel encapsulation method and optical fiber technology. Method Organically modified sol-gel film was prepared by hydrolyzing tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) together, and film-processing conditions were optimized. Overall validation of the method was carried out by building Stern-Volmer plots and determining the concentration of oxygen in samples.