Publications by authors named "Taiki Kataoka"

Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cmVs). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline InO (InO:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process.

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We successfully demonstrated a transition from a metallic InO film into a nondegenerate semiconductor InO:H film. A hydrogen-doped amorphous InO:H (a-InO:H) film, which was deposited by sputtering in Ar, O, and H gases, could be converted into a polycrystalline InO:H (poly-InO:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.

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Current pretreatment methods for wastewater from natural rubber (NR) factories either have low rubber recovery efficiency or are costly to operate. A wastewater treatment system was developed that combines a pretreatment canal (PTC) seeded with rubber, an anaerobic baffled reactor (ABR), and a down-flow hanging sponge (DHS) reactor. The PTC is simple to implement and contributes to not only rubber recovery but also organic matter removal in the ABR and nitrogen removal in the DHS reactor.

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A laboratory-scale experiment is conducted to remove nitrogen from nitrogen-rich wastewater using a down-flow hanging sponge (DHS) reactor. Effluent from an anaerobic-aerobic system for treating synthetic natural rubber wastewater, which still contains high levels of ammonia, was used as nitrogen-rich wastewater. Experimental period was divided into four phases based whether a carbon source was fed to the DHS reactor.

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