Enhancing Field-Like Efficiency Via Interface Engineering with Sub-Atomic Layer Ta Insertion.

The prevailing research emphasis has been on reducing the critical switching current density (J) by enhancing the damping-like efficiency (β). However, recent studies have shown that the field-like efficiency (β) can also play a major role in reducing J. In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the β associated with the interface.

PP2 alleviates the progression of osteoarthritis by inhibiting Wnt/β-catenin and activating TGF-β/Smad signaling.

Objective: We aimed to explore the effect and mechanism of the Src inhibitor PP2 on osteoarthritis (OA) progression.

Methods: The protein expressions of Src, p-Src (y418) and p-FAK in normal and OA human chondrocytes were detected by immunofluorescence (IF) analysis. Chondrocytes from the femur and tibial plateau of 3-day-old mice were extracted and inoculated into 6-well plates.

Interfacial engineering of tungstic disulfide-carbide heterojunction for high-current-density hydrogen evolution.

Developing low-cost and high-efficiency electrocatalysts to electrolyze water is an effective method for large-scale hydrogen production. For large-scale commercial applications, it is crucial to call for more efficient electrocatalysts with high-current density (≥1000 mA cm). However, it is challenging to simultaneously promote the large-scale production and hydrogen evolution reaction (HER) activity of these hydrogen catalysts.

Water assisted growth of two-dimensional MoS/MoSe vertical heterostructures on molten glass.

Herein, we demonstrate a chemical vapor deposition route to the controlled growth of large scale MoS/MoSe vertical van der Waals heterostructures on a molten glass substrate using water as the oxidizing chemical to guarantee a sufficient and uniform delivery of the metal precursor. This work offers an efficient way for developing other layered heterostructures for integrated electronic and optoelectronic devices.