Publications by authors named "Tai-Chang Chiang"

Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in-plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals (2D crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless contacts. Directional structural superlubricity, to date unrealized in 2D systems, is possible when the reciprocal lattices of the two crystals coincide in one direction only.

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Spin-helical Dirac Fermions at a doped topological insulator's boundaries can support Majorana quasiparticles when coupled with -wave superconductors, but in -doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are -doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in -doped topological SbTe on superconducting Nb.

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A two-dimensional (2D) Weyl semimetal, akin to a spinful variant of graphene, represents a topological matter characterized by Weyl fermion-like quasiparticles in low dimensions. The spinful linear band structure in two dimensions gives rise to distinctive topological properties, accompanied by the emergence of Fermi string edge states. We report the experimental realization of a 2D Weyl semimetal, bismuthene monolayer grown on SnS(Se) substrates.

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Coupling Weyl quasiparticles and charge density waves (CDWs) can lead to fascinating band renormalization and many-body effects beyond band folding and Peierls gaps. For the quasi-one-dimensional chiral compound (TaSe)I with an incommensurate CDW transition at = 263 K, photoemission mappings thus far are intriguing due to suppressed emission near the Fermi level. Models for this unconventional behavior include axion insulator phases, correlation pseudogaps, polaron subbands, bipolaron bound states, etc.

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Composite topological heterostructures, wherein topologically protected states are electronically tuned due to their proximity to other matter, are key avenues for exploring emergent physical phenomena. Particularly, pairing a topological material with a superconductor such as Pb is a promising means for generating a topological superconducting phase with exotic Majorana quasiparticles, but oft-neglected is the emergence of bulklike spin-polarized states that are quite relevant to applications. Using high-resolution photoemission spectroscopy and first-principles calculations, we report the emergence of bulk-like spin-polarized topological quantum well states with long coherence lengths in Pb films grown on the topological semimetal Sb.

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Glide-mirror symmetry in nonsymmorphic crystals can foster the emergence of novel hourglass nodal loop states. Here, we present spectroscopic signatures from angle-resolved photoemission of a predicted topological hourglass semimetal phase in NbSiTe. Linear band crossings are observed at the zone boundary of NbSiTe, which could be the origin of the nontrivial Berry phase and are consistent with a predicted glide quantum spin Hall effect; such linear band crossings connect to form a nodal loop.

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Article Synopsis
  • Monolayer transition metal dichalcogenides, like MoS and PtTe, show promise for developing advanced electronics due to their tunable electronic properties.
  • Using scanning tunneling microscopy/spectroscopy, researchers found that the bandgap of MoS decreases logarithmically with increased tunneling current, illustrating an electric-field-induced gap renormalization.
  • In contrast, PtTe exhibits a stronger reduction in bandgap and can switch from a semiconductor to a metal at moderate tunneling currents, a behavior tied to its unique surface electronic structure.
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Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at [Formula: see text] in topological insulators BiSe(Te) and Dirac cones at K and [Formula: see text] points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries.

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Epitaxial thin-film heterostructures offer a versatile platform for realizing topological surface states (TSSs) that may be emergent and/or tunable by tailoring the atomic layering in the heterostructures. Here, as an experimental demonstration, Sb and BiTe thin films with closely matched in-plane lattice constants are chosen to form two complementary heterostructures: Sb overlayers on BiTe (Sb/BiTe) and BiTe overlayers on Sb (BiTe/Sb), with the overlayer thickness as a tuning parameter. In the bulk form, Sb (a semimetal) and BiTe (an insulator) both host TSSs with the same topological order but substantially different decay lengths and dispersions, whereas ultrathin Sb and BiTe films by themselves are fully gapped trivial insulators.

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Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the 2D material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals, and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different twisted graphene layers. In this work, a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates is proposed.

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Antimony oxide nanostructures have been identified as candidates for a range of electronic and optoelectronic applications. Here we demonstrate the growth of 2-dimensional antimony oxide nanostructures on various substrates, including highly oriented pyrolytic graphite (HOPG), MoS and α-Bi(110) nanoislands. Using scanning tunneling microscopy (STM) we show that the nanostructures formed are exclusively highly crystalline α-SbO(111) monolayers with a lattice constant of 796 pm ± 7 pm.

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Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and nontrivial Berry phase play a pivotal role in the electronic, optical, mechanical, and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of spin-orbit coupling (SOC).

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Chemical conversion by atomic substitution offers a powerful route toward the creation of unusual structures and functionalities. Here, we demonstrate the progressive transformation of single-layer TiTe into TiSe by reaction with a Se flux in vacuum. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy reveal intriguing reaction patterns involving TiSe island ingrowth starting from the TiTe island edges, while the band structure and core level signatures of TiSe grow in intensity at the expense of those corresponding to TiTe.

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Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudomagnetic field effects, helical flat bands, and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here we show that the Dirac surface states of the topological insulator BiSe can be reversibly tuned by an externally applied elastic strain.

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A topological insulator film coupled to a simple isotropic s-wave superconductor substrate can foster helical pairing of the Dirac fermions associated with the topological surface states. Experimental realization of such a system is exceedingly difficult, however using a novel "flip-chip" technique, we have prepared single-crystalline BiSe films with predetermined thicknesses in terms of quintuple layers (QLs) on top of Nb substrates fresh from in situ cleavage. Our angle-resolved photoemission spectroscopy (ARPES) measurements of the film surface disclose superconducting gaps and coherence peaks of similar magnitude for both the topological surface states and bulk states.

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Time-dependent responses of materials to an ultrashort optical pulse carry valuable information about the electronic and lattice dynamics; this research area has been widely studied on novel two-dimensional materials such as graphene, transition metal dichalcogenides (TMDs) and topological insulators (TIs). We report herein a time-resolved and angle-resolved photoemission spectroscopy (TRARPES) study of WSe, a layered semiconductor of interest for valley electronics. The results for below-gap optical pumping reveal energy-gain and -loss Floquet replica valence bands that appear instantaneously in concert with the pump pulse.

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Weyl semimetals (WSMs) are classified into two types, type I and II, according to the topology of the Weyl point, where the electron and hole pockets touch each other. Tungsten ditelluride (WTe) has garnered a great deal of attention as a strong candidate to be a type-II WSM. However, the Weyl points for WTe are located above the Fermi level, which has prevented us from identifying the locations and the connection to the Fermi arc surface states by using angle-resolved photoemission spectroscopy.

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Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn, ZrSiS, TlTaSe and PbTaSe.

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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy, we have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form.

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Honeycomb structures of group IV elements can host massless Dirac fermions with nontrivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β_{12} sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface.

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We report on the fabrication of a two-dimensional topological insulator Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.

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The surface cleansing treatment of non-natural cleavage planes of semiconductors is usually performed in vacuum using ion sputtering and subsequent annealing. In this Research Article, we report on the evolution of surface atomic structure caused by different ways of surface treatment as monitored by in situ core-level photoemission measurements of Cd-4d and Te-4d atomic levels and reflection high-energy electron diffraction (RHEED). Sputtering of surface increases the density of the dangling bonds by 50%.

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Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a √3 × √3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1 × 1) configuration at small film thickness.

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Many physical and chemical properties of the light rare-earths and actinides are governed by the active role of f electrons, and despite intensive efforts the details of the mechanisms of phase stability and transformation are not fully understood. A prominent example which has attracted a lot of interest, both experimentally and theoretically over the years is the isostructural γ - α transition in cerium. We have determined by inelastic X-ray scattering, the complete phonon dispersion scheme of elemental cerium across the γ → α transition, and compared it with theoretical results using ab initio lattice dynamics.

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