Publications by authors named "Tafto J"

X-ray emission under electron-channelling conditions is used to distinguish between a non-centrosymmetric half-Heusler and a centrosymmetric full-Heusler crystal. For TiCoSn the space-group determination based on a Rietveld refinement procedure became challenging for increasing Co content (x > 0.2), while electron channelling proved successful for higher Co content (x = 0.

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We classify the point symmetries at the different points in the Brillouin zone for the 17 two-dimensional space groups and the symmetries of the Bloch waves for the 10 two-dimensional crystallographic point groups. Simple examples involving breakdown of Friedels law, Gjonnes-Moodie lines, and reflection and refraction at interfaces are presented.

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A method for preparing plane-view transmission electron microscope (TEM) samples is presented. With this inclined pseudo-plane-view technique, the undisturbed surface of the sample can be studied in plane view. Thus, nanostructures on the surface of a substrate can be studied with TEM in much the same way as with scanning electron microscopy (SEM), but in transmission at a much higher spatial resolution and with the opportunity of performing nanoscale diffraction.

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Skutterudites, with rattler atoms introduced in voids in the crystal unit cell, are promising thermoelectric materials. We modify the binary skutterudite with atomic content Co(8)P(24) in the cubic crystal unit cell by adding La as rattlers in all available voids and replacing Co by Fe to maintain charge balance, resulting in La(2)Fe(8)P(24). The intention is to leave the electronic structure unaltered while decreasing the thermal conductivity due to the presence of the rattlers.

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We use the sum of the ionization and Auger energy, the so-called Auger parameter, measured from the x-ray photoelectron spectrum, to study the valence electron distribution in the skutterudite CoP(3). The electron transfer between Co and P was estimated using models relating changes in Auger parameter values to charge transfer. It was found that each P atom gains 0.

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We combine off-axis electron holography and electron shadow imaging to accurately determine the specimen thickness and the incident electron beam direction over the illuminated area of a crystal. We, furthermore, quantify the variations in diffraction intensity with position over the same area. This unique solution to the experimental boundary condition problem enables us to make precise measurements of mean inner electrostatic potentials and structure factors that are sensitive to the bonding characteristics of materials.

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We developed a novel electron-diffraction technique by focusing a small probe above (or below) the sample in an electron microscope to measure charge density and lattice displacement in technologically important materials. The method features the simultaneous acquisition of shadow images within many Bragg reflections, resulting in parallel recording of dark-field images (PARODI). Because it couples diffraction with images, it is thus suitable for studying crystals as well as their defects.

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We relate element characteristic electron energy losses and the accompanying X-ray emission under electron channeling conditions to the phases of structure factors. We discuss examples illustrating that structure factor phase information can be extracted from two-beam channeling experiments. This information has been used by several investigators to determine the absolute orientation of non-centrosymmetric crystals.

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The crystal structure of the complex pi-AlFeMgSi phase, which was previously thought to have the composition Al(8)FeMg(3)Si(6), has been investigated. Microprobe analysis revealed that the phase has a different composition, Al(9)FeMg(3)Si(5). The space group was determined and confirmed to be P62m with the use of parallel-beam electron diffraction (SAD) and convergent-beam electron diffraction (CBED).

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We use x-ray absorption spectroscopy (XAS) and electron energy loss spectroscopy (EELS) to study the fine structure at the K edge of boron in MgB(2). We observe in XAS a peak of width 0.7 eV at the edge threshold, signaling a narrow energy region with empty boron p states near the Fermi level.

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We developed a novel shadow-imaging diffraction technique, using both non-coherent and coherent sources, based on parallel recording of diffraction intensity of many reflections to measure charge distribution and lattice displacement in crystals and in defects. Applying the method to Bi2Sr2CaCu2O8 superconductors demonstrated its unprecedented sensitivity and accuracy.

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We calculate the shadow image in far field below a thin crystal when a coherent electron source is placed at micrometer distances above the specimen, and note that the presence of a planar fault results in very strong oscillatory contrast. We realize these predictions experimentally using a field-emission electron source in a microscope. With this technique, we determine displacement vectors at planar faults with an accuracy down to 1 pm in studies of the Bi2Sr2CaCu2O8 superconductor containing thin intercalated layers.

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We report our study of the distribution of valence electrons in Bi2Sr2CaCu2O8+delta high-temperature superconductors using novel electron-diffraction and imaging techniques. The former method was based on quantitative analyses of the diffraction intensity of many reflections as a function of crystal thickness to determine, with an unprecedented accuracy, the Fourier components of the electron distribution in Bi2Sr2CaCu2O8+delta. The latter was based on examining the effect of charge transfer on many-beam imaging by comparing the observed and calculated low- and high-resolution images of long-period displacive and charge modulation of the cuprate.

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A new crysallographic technique has been developed, which has been applied to the problem of locating the cations in a natural olivine crystal with the composition (Mg(0.90)Fe(0.10)Ni(0.

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