Pre-Melting-Assisted Impurity Control of β-GaO Single Crystals in Edge-Defined Film-Fed Growth.

This study reveals the significant role of the pre-melting process in growing high-quality (100) β-GaO single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity.