Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis.

We demonstrate that resistance random access memory (RRAM) can be fabricated based on CdS-nanocrystal thin films. A simple drop-drying of the CdS-nanocrystal solution leads to the formation of uniform thin films with controlled thickness. RRAMs with a Ag/Al(2) O(3) /CdS/Pt structure show bipolar switching behavior, with average values of the set voltage (V(Set) ) and reset voltage (V(Reset) ) of 0.

Optical study of Mn-doped Bi4Ti3O,12 thin films by spectroscopic ellipsometry.

Mn-doped Bi4Ti3O12(B4T3) thin films grown at 400 degrees C on a Pt/Ti/SiO2/Si substrate through pulsed laser deposition (PLD) were analyzed via spectroscopic ellipsometry (SE). The PLD targets were produced through the conventional solid-state sintering method, and the film samples were annealed at 600 degrees C. The SE spectra of B4T3 films were measured using a rotating analyzer type ellipsometer within the 1.

A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.

The amorphous Bi(5)Nb(3)O(15) film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O(2) film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm(-2) during and after 10(5) bending cycles with a small curvature radius of 7.