Ultra-Transparent and Multifunctional IZVO Mesh Electrodes for Next-Generation Flexible Optoelectronics.

Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices. Furthermore, they are crucial for applications in the fields of energy, display, healthcare, and soft robotics. Conducting meshes represent a promising alternative to traditional, brittle, metal oxide conductors due to their high electrical conductivity, optical transparency, and enhanced mechanical flexibility.

GeTe/MoTe Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications.

Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next-generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe HS are explored for nonvolatile memory and neuromorphic-computing applications. Sputter-deposited Ag/GeTe/MoTe/Pt HS cross-point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (V: 0.

Phase Change Heterostructure Memory with Oxygen-Doped SbTe Layers for Improved Durability and Reliability through Nano crystalline Island Formation.

Phase-change random access memory represents a notable advancement in nonvolatile memory technology; however, it faces challenges in terms of thermal stability and reliability, hindering its broader application. To mitigate these issues, doping and structural modification techniques such as phase-change heterostructures (PCH) are widely studied. Although doping typically enhances thermal stability, it can adversely affect the switching speed.

Bio-Inspired Photosensory Artificial Synapse Based on Functionalized Tellurium Multiropes for Neuromorphic Computing.

Nanomaterials like graphene and transition metal dichalcogenides are being explored for developing artificial photosensory synapses with low-power optical plasticity and high retention time for practical nervous system implementation. However, few studies are conducted on Tellurium (Te)-based nanomaterials due to their direct and small bandgaps. This paper reports the superior photo-synaptic properties of covalently bonded Tellurium sulfur oxide (TeSO) and Tellurium selenium oxide (TeSeO)nanomaterials, which are fabricated by incorporating S and Se atoms on the surface of Te multiropes using vapor deposition.

Unsupervised sequence-to-sequence learning for automatic signal quality assessment in multi-channel electrical impedance-based hemodynamic monitoring.

Background And Objective: This study proposes an unsupervised sequence-to-sequence learning approach that automatically assesses the motion-induced reliability degradation of the cardiac volume signal (CVS) in multi-channel electrical impedance-based hemodynamic monitoring. The proposed method attempts to tackle shortcomings in existing learning-based assessment approaches, such as the requirement of manual annotation for motion influence and the lack of explicit mechanisms for realizing motion-induced abnormalities under contextual variations in CVS over time.

Method: By utilizing long-short term memory and variational auto-encoder structures, an encoder-decoder model is trained not only to self-reproduce an input sequence of the CVS but also to extrapolate the future in a parallel fashion.

Self-Powering Sensory Device with Multi-Spectrum Image Realization for Smart Indoor Environments.

The development of organic-based optoelectronic technologies for the indoor Internet of Things market, which relies on ambient energy sources, has increased, with organic photovoltaics (OPVs) and photodetectors (OPDs) considered promising candidates for sustainable indoor electronic devices. However, the manufacturing processes of standalone OPVs and OPDs can be complex and costly, resulting in high production costs and limited scalability, thus limiting their use in a wide range of indoor applications. This study uses a multi-component photoactive structure to develop a self-powering dual-functional sensory device with effective energy harvesting and sensing capabilities.

Dual-frequency piezoelectric micromachined ultrasound transducer based on polarization switching in ferroelectric thin films.

Due to its additional frequency response, dual-frequency ultrasound has advantages over conventional ultrasound, which operates at a specific frequency band. Moreover, a tunable frequency from a single transducer enables sonographers to achieve ultrasound images with a large detection area and high resolution. This facilitates the availability of more advanced techniques that simultaneously require low- and high-frequency ultrasounds, such as harmonic imaging and image-guided therapy.

Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials.

Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization.

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase-Change Heterostructure Memory.

Phase-change random-access memory is a promising non-volatile memory technology. However repeated phase-change operations can cause durability issues owing to defects formed by long-distance atom diffusion. To mitigate these issues, phase-change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe have been proposed.

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics.

Flexible Memristive Organic Solar Cell Using Multilayer 2D Titanium Carbide MXene Electrodes.

Hybrid systems have attracted significant attention within the scientific community due to their multifunctionality, which has resulted in increasing demands for wearable electronics, green energy, and miniaturization. Furthermore, MXenes are promising two-dimensional materials that have been applied in various areas due to their unique properties. Herein, a flexible, transparent, and conductive electrode (FTCE) based on a multilayer hybrid MXene/Ag/MXene structure that can be applied to realize an inverted organic solar cell (OSC) with memory and learning functionalities is reported.

Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO Nanotubes.

The applied potential, time, and water content are crucial factors in the electrochemical anodization process because the growth of one-dimensional nanotubes can be accelerated by enhancing the corrosive effect. We investigated the effect of the water content on the resistive switching (RS) properties of Ti foils by anodizing the foils and varying the water content in an electrolyte (1-10 vol %). By increasing the water content, we facilitated a slow transition from nanopores to nanotubes and realized an increase in the tube wall diameter and tube length.

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.

Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device.

Cavity-Suppressing Electrode Integrated with Multi-Quantum Well Emitter: A Universal Approach Toward High-Performance Blue TADF Top Emission OLED.

A novel device structure for thermally activated delayed fluorescence (TADF) top emission organic light-emitting diodes (TEOLEDs) that improves the viewing angle characteristics and reduces the efficiency roll-off is presented. Furthermore, we describe the design and fabrication of a cavity-suppressing electrode (CSE), Ag (12 nm)/WO (65 nm)/Ag (12 nm) that can be used as a transparent cathode. While the TADF-TEOLED fabricated using the CSE exhibits higher external quantum efficiency (EQE) and improved angular dependency than the device fabricated using the microcavity-based Ag electrode, it suffers from low color purity and severe efficiency roll-off.

Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices.

Ultrathin film-based transparent conductive oxides (TCOs) with a broad work function (WF) tunability are highly demanded for efficient energy conversion devices. However, reducing the film thickness below 50 nm is limited due to rapidly increasing resistance; furthermore, introducing dopants into TCOs such as indium tin oxide (ITO) to reduce the resistance decreases the transparency due to a trade-off between the two quantities. Herein, we demonstrate dopant-tunable ultrathin (≤ 50 nm) TCOs fabricated via electric field-driven metal implantation (m-TCOs; m = Ni, Ag, and Cu) without compromising their innate electrical and optical properties.

Giant Thermoelectric Seebeck Coefficients in Tellurium Quantum Wires Formed Vertically in an Aluminum Oxide Layer by Electrical Breakdown.

High efficiency thermoelectric (TE) materials still require high thermopower for energy harvesting applications. A simple elemental metallic semiconductor, tellurium (Te), has been considered critical to realize highly efficient TE conversion due to having a large effective band valley degeneracy. This paper demonstrates a novel approach to directly probe the out-of-plane Seebeck coefficient for one-dimensional Te quantum wires (QWs) formed locally in the aluminum oxide layer by well-controlled electrical breakdown at 300 K.

Work Function-Tunable Amorphous Carbon-Silver Nanocomposite Hybrid Electrode for Optoelectronic Applications.

Parameters such as electrode work function (WF), optical reflectance, electrode morphology, and interface roughness play a crucial role in optoelectronic device design; therefore, fine-tuning these parameters is essential for efficient end-user applications. In this study, amorphous carbon-silver (C-Ag) nanocomposite hybrid electrodes are proposed and fully characterized for solar photovoltaic applications. Basically, the WF, sheet resistance, and optical reflectance of the C-Ag nanocomposite electrode are fine-tuned by varying the composition in a wide range.

TiC-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications.

MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored TiC MXene for digital and analog computing applications by engineering the top electrode.

Nanoscale 3D Stackable Ag-Doped HfO-Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing.

Electrochemical metallization-based threshold switching devices with active metal electrodes have been studied as a selector for high-density resistive random access memory (RRAM) technology in crossbar array architectures. However, these devices are not suitable for integration with three-dimensional (3D) crossbar RRAM arrays due to the difficulty in vertical stacking and/or scaling into the nanometer regime as well as the asymmetric threshold switching behavior and large variation in the operating voltage. Here, we demonstrate bidirectional symmetric threshold switching behaviors from a simple Pt/Ag-doped HfO/Pt structure.

Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering.

We investigate the intrinsic thermoelectric (TE) properties of the metal-diffused aluminum oxide (AO) layer in metal/AO/metal structures, where the metallic conducting filaments (CFs) were locally formed in the structures via an electrical breakdown (EBD) process as shown by resistive switching memory devices, by directly measuring cross-plane Seebeck coefficients on the CF-containing insulating AO layers. The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample. In addition, the increase in the Seebeck coefficients of the CF-containing AO layer when the number of EBD-processed patterns was increased is satisfactorily explained by the low-energy carrier (i.

Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers.

Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance.

A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p-i-n GaN nanorods.

In gas sensors, metal oxide semiconductors have been considered as favorable resistive-type toxic gas sensing materials. However, the higher temperature operation of metal oxides becomes a barrier for their wide range of applications in explosive and flammable gas environments. In this regard, great efforts have been devoted to reducing the operating temperature of the sensor.

Direct Probing of Cross-Plane Thermal Properties of Atomic Layer Deposition AlO/ZnO Superlattice Films with an Improved Figure of Merit and Their Cross-Plane Thermoelectric Generating Performance.

There is a recent interest in semiconducting superlattice films because their low dimensionality can increase the thermal power and phonon scattering at the interface in superlattice films. However, experimental studies in all cross-plane thermoelectric (TE) properties, including thermal conductivity, Seebeck coefficient, and electrical conductivity, have not been performed from these semiconducting superlattice films because of substantial difficulties in the direct measurement of the Seebeck coefficient and electrical conductivity. Unlike the conventional measurement method, we present a technique using a structure of sandwiched superlattice films between two embedded heaters as the heating source, and electrodes with two Cu plates, which directly enables the investigation of the Seebeck coefficient and electrical conductivity across the AlO/ZnO superlattice films, prepared by the atomic layer deposition method.

Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes.

Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiO) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiO electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer.

Two-Dimensional Layered Hydroxide Nanoporous Nanohybrids Pillared with Zero-Dimensional Polyoxovanadate Nanoclusters for Enhanced Water Oxidation Catalysis.

The oxygen-evolution reaction (OER) is critical in electrochemical water splitting and requires an efficient, sustainable, and cheap catalyst for successful practical applications. A common development strategy for OER catalysts is to search for facile routes for the synthesis of new catalytic materials with optimized chemical compositions and structures. Here, nickel hydroxide Ni(OH) 2D nanosheets pillared with 0D polyoxovanadate (POV) nanoclusters as an OER catalyst that can operate in alkaline media are reported.