The tight-binding method is used to investigate the electronic and magnetic properties of borophene nano-ribbons (BNRs) in the presence of a perpendicular magnetic field. Most BNRs exhibit metallic characteristics due to edge bands. Additionally, the appearance of Landau levels (LLs) is strongly influenced by the edge states, contrasting with the sheet platform which produces distinct LLs.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2022
We investigate the dynamic optical transition of monolayer silicene in the presence of external electric and exchange fields within the low-energy tight-binding model. Applying external electric and exchange fields breaks the silicene band structure spin and valley degeneracies. Three phases of silicene corresponding to different strengths of perpendicular electric field with respect to the spin-orbit coupling (Δ< Δ, Δ= Δand Δ> Δ) are considered.
View Article and Find Full Text PDFPhys Chem Chem Phys
August 2021
Using first-principles many-body perturbation theory, we investigate the optical properties of 8-Pmmn borophene at two levels of approximations; the GW method considering only the electron-electron interaction and the GW in combination with the Bethe-Salpeter equation including electron-hole coupling. The band structure exhibits anisotropic Dirac cones with semimetallic character. The optical absorption spectra are obtained for different light polarizations and we predict strong optical absorbance anisotropy.
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April 2021
We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature,, carrier density,, and layer separation,, on the plasmon modes and drag resistivity within the energy-independent scattering time approximation. Our results show that the density dependence of plasmon modes can be approximated by.
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April 2018
We calculate the thermal conductivity of free-standing silicene using the phonon Boltzmann transport equation within the relaxation time approximation. In this calculation, we investigate the effects of sample size and different scattering mechanisms such as phonon-phonon, phonon-boundary, phonon-isotope and phonon-vacancy defect. We obtain some similar results to earlier works using a different model and provide a more detailed analysis of the phonon conduction behavior and various mode contributions.
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