In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under these conditions, the electronic system can efficiently amplify acoustic phonons, leading to an exponential growth of sound waves in the direction of the carrier flow. Here, we show that such phonon amplification can significantly modify the electrical properties of graphene devices.
View Article and Find Full Text PDFIt has long been realized that even a perfectly clean electronic system harbors a Landauer-Sharvin resistance, inversely proportional to the number of its conduction channels. This resistance is usually associated with voltage drops on the system's contacts to an external circuit. Recent theories have shown that hydrodynamic effects can reduce this resistance, raising the question of the lower bound of resistance of hydrodynamic electrons.
View Article and Find Full Text PDFElectrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conduction limit of non-interacting electrons.
View Article and Find Full Text PDFApplying in-plane uniaxial pressure to strongly correlated low-dimensional systems has been shown to tune the electronic structure dramatically. For example, the unconventional superconductor SrRuO can be tuned through a single Van Hove point, resulting in strong enhancement of both T and H. Out-of-plane (c axis) uniaxial pressure is expected to tune the quasi-two-dimensional structure even more strongly, by pushing it towards two Van Hove points simultaneously.
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