Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices.

This paper presents a systematic investigation of strain compensation schemes for InAs/AlSb superlattices (SLs) on GaSb substrates. Short growth interruptions (soak times) under varying arsenic and/or antimony beam equivalent pressures in InAs/AlSb SLs with exemplary dimensions of about ((2.4/2.

Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system.

We present a multi-segment photonic crystal coupled cavity laser device on GaSb with a microstructured internal photodiode. This monolithically integrated power monitor is added as a third segment to a coupled cavity laser and is separated from the active device by six rows of two-dimensional photonic crystals, acting as highly reflecting mirrors. There is no additional fabrication step needed to integrate this feature into the coupled cavity laser, resulting in a highly integrated laser device of only 800 µm length.

Discretely tunable single-mode lasers on GaSb using two-dimensional photonic crystal intracavity mirrors.

We report on single-mode emitting coupled cavity ridge waveguide lasers on the GaSb material system in the 2 µm spectral range using two-dimensional (2D) photonic crystals (PhCs). Eight rows of 2D PhCs lateral to the ridge waveguides act as intermediate mirrors and are used to create two coupled cavities. This leads to preferential emission at one single longitudinal mode in the emission spectrum with side mode suppression ratios of 30-35 dB.

GaSb-based lasers with two-dimensional photonic crystal mirrors.

We present the realization of two-dimensional (2D) photonic crystals (PhCs) on the GaSb material system. An electron cyclotron resonance reactive ion etch process using Cl(2)/Ar allows the fabrication of PhCs covering air fill factors of f = 20%-50%, lattice periods of a = 400-500 nm and aspect ratios of 5:1. Quality and reflectivity of these structures are evaluated by incorporating the PhCs as high reflective back mirrors in GaSb-based ridge waveguide lasers with cavity lengths between 200 and 1100 µm with the front facet as cleaved.

High performance short period superlattice digital alloy InSb/Ga(x)In(1-x)Sb laser emitting at 1.9 µm.

For the first time, lasers with short period superlattice based quantum wells have successfully been fabricated and characterized on the (AlGaIn)(AsSb) material system. These new quantum wells are composed of alternating InSb/Ga(x)In(1-x)Sb layers with submonolayer thickness. Distributed-feedback lasers fabricated from the epitaxial layers emit in the wavelength range around 1.