Publications by authors named "T Kostenbader"
Article Synopsis
- Semiconductor nanowire (NW) lasers are promising for integrated optical communication and sensing applications, but achieving tunable lasing from individual NWs is difficult.
- The researchers successfully demonstrated lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs featuring multiple InGaAs quantum wells, with wavelengths adjustable from approximately 0.8 to 1.1 μm.
- The study highlights the importance of quantum well design, growth conditions, and InGaAs composition in wavelength tuning, supported by advanced microscopic analyses that reveal insights for enhancing other III-V NW laser systems.
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region.
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