Low-loss 1.3-microm GaInNAs saturable Bragg reflector for high-power picosecond neodymium lasers.

A novel low-loss, single-step-growth 1.3-microm GaInNAs saturable Bragg reflector mode-locking element has been developed. Combined radial thickness and postgrowth annealing control have permitted a tuning range of 46 nm for passive mode locking to be demonstrated from one wafer.

Mode-locked ytterbium fiber lasers.

A compact fiber laser is demonstrated with use of a Gires-Tournois compensator and a short length (2-4 cm-long) of highly doped ytterbium (Yb) fiber providing net anomalous group-velocity dispersion. With use of a novel semiconductor saturable absorber mirror based on GaInNAs structure, self-started 1.5-ps-pulse mode-locked operation was obtained at 1023 nm with a repetition rate of 95 MHz.

Mode-locked ytterbium fiber laser tunable in the 980-1070-nm spectral range.

Spectral tuning of a mode-locked Yb-doped fiber laser over a 90-nm range is reported. Using semiconductor saturable absorber mirrors in a fiber laser cavity incorporating a grating-pair dispersive delay line, we obtain reliable self-starting mode locking over the whole tuning range. The wide tuning range is achieved by optimization of reflection characteristics and bandgap energy of the multiple-quantum-well semiconductor saturable absorber and by proper engineering of the laser cavity.

1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser.