Selective area growth and stencil lithography for in situ fabricated quantum devices.

The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S-TI hybrid devices in future topological quantum computation architectures, a process is required that allows for device fabrication under ultrahigh vacuum conditions. Here, we report on the selective area growth of (Bi,Sb)Te TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S-TI hybrid devices via molecular-beam epitaxy.

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux.

Self-catalyzed VLS grown InAs nanowires with twinning superlattices.

We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor-liquid-solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate.