Heterojunction Devices Fabricated from Sprayed -Type GaO, Combined with Sputtered -Type NiO and CuO.

This work reports on the properties of heterojunctions consisting of -type GaO layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with -type NiO and CuO counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for GaO/CuO and 220 mV for GaO/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed GaO and CuO, with small conduction band offset, and the large offsets anticipated for both energy bands in the case of GaO/NiO.

Moderate temperature deposition of RF magnetron sputtered SnO-based electron transporting layer for triple cation perovskite solar cells.

The perovskite solar cells (PSCs) are still facing the two main challenges of stability and scalability to meet the requirements for their potential commercialization. Therefore, developing a uniform, efficient, high quality and cost-effective electron transport layer (ETL) thin film to achieve a stable PSC is one of the key factors to address these main issues. Magnetron sputtering deposition has been widely used for its high quality thin film deposition as well as its ability to deposit films uniformly on large area at the industrial scale.

Tunability of silicon clathrate film properties by controlled guest-occupation of their cages.

Type I and type II silicon clathrates are guest-host structures made of silicon polyhedral cages large enough to contain atoms that can be either inserted or evacuated with only a slight volume change of the structure. This feature is of interest not only for batteries or storage applications but also for tuning the properties of the silicon clathrate films. The thermal decomposition process can be tuned to obtain Na8Si46 and Na2 View Article and Find Full Text PDF

Study of wide bandgap SnO thin films grown by a reactive magnetron sputtering via a two-step method.

In the present work, we report on the microstructural and optoelectronic properties of SnO thin films deposited by a reactive radio frequency magnetron sputtering. After SnO growth by sputtering under O/Ar flow, we have used three different treatment methods, namely (1) as deposited films under O/Ar, (2) vacuum annealed films ex-situ, and (3) air annealed films ex-situ. Effects of the O/Ar ratios and the growth temperature were investigated for each treatment method.

Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins.

Silicon vacancy (VSi) color centers in bulk SiC are excellent electron spin qubits. However, most spin based quantum devices require shallow spin qubits, whose dynamics is often different from that of bulk ones. Here, we demonstrate (i) a new method for creating shallow VSi (V2) spin qubits below the SiC surface by low energy ion implantation through a sacrificial SiO layer, (ii) that these shallow VSi are dipolar coupled to an electronic spin bath, analysed by Hahn echo decay, dynamical decoupling (DD), and optically pumped pulsed electron-electron double resonance experiments (OP-PELDOR), (iii) that their coherence time increases with cooling of the spin bath (from 55 μs at 297 K to 107 μs at 28 K), and that it can be further extended to 220 μs at 100 K by DD, thus demonstrating their relevance for PELDOR-based quantum sensors and processors.