The effects of helium, strontium, and silver triple ions implanted into SiC.

The effects of helium (He), silver (Ag) and strontium (Sr) ions triple implanted into polycrystalline silicon carbide (SiC) were investigated. Ag ions of 360 keV were first implanted into polycrystalline SiC to a fluence of 2 × 10 cm at 600 °C, followed by implantation of Sr ions of 280 keV to a fluence of 2 × 10 cm also at 600 °C (Ag + Sr-SiC). Some of Ag + Sr-SiC samples were then implanted with 17 keV He ions to a fluence of 1 × 10  cm at 350 °C (Ag + Sr + He-SiC).