Composition dependence of penetration range and backscattering coefficient of electrons impinging on SiGe and GaAsN semiconducting alloys.

The alloy composition dependence of penetration range and backscattering coefficient of electrons normally impinging on SiGe and GaAsN semiconductor alloys targets for beam energies in the range 0.5-3.5 keV has been investigated.

Pseudopotential calculations of AlSb under pressure.

The dependence on hydrostatic pressure of the electronic and optical properties of zinc-blende AlSb semiconducting material in the pressure range of 0-20kbar has been reported using a pseudopotential approach. At zero pressure, our findings showed that the electron and heavy hole effective masses are 0.11 and 0.