Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution.
View Article and Find Full Text PDFExperimental noise often contains information about the interactions of a system with its environment, but establishing a relation between the measured time fluctuations and the underlying physical observables is rarely apparent. Here, we leverage a multidimensional and multisensor analysis of spectral diffusion to investigate the dynamics of trapped carriers near subdiffraction clusters of nitrogen-vacancy (NV) centers in diamond. We establish statistical correlations in the spectral fluctuations we measure as we recursively probe the cluster optical resonances, which we then exploit to reveal proximal traps.
View Article and Find Full Text PDFThe last decade has seen an explosive growth in the use of color centers for metrology applications, the paradigm example arguably being the nitrogen-vacancy (NV) center in diamond. Here, we focus on the regime of cryogenic temperatures and examine the impact of spin-selective, narrow-band laser excitation on NV readout. Specifically, we demonstrate a more than fourfold improvement in sensitivity compared to that possible with nonresonant (green) illumination, largely due to a boost in readout contrast and integrated photon count.
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