Publications by authors named "T Dekorsy"

Longitudinal acoustic modes in planar thin gold films are excited and detected by a combination of ultrafast pump-probe photoacoustic spectroscopy and a surface plasmon resonance (SPR) technique. The resulting high sensitivity allows the detection of acoustic modes up to the 7th harmonic (258 GHz) with sub-pm amplitude sensing capabilities. This makes a comparison of damping times of individual modes possible.

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Stress-induced birefringence leads to losses in solid-state laser resonators and amplifiers with polarized output beams. A model of stress-induced birefringence in thin disks is presented, as well as measurements of stress-induced birefringence in a thin disk in a multi-kilowatt oscillator. A full-Stokes imaging polarimeter was developed to enable fast and accurate polarimetric measurements.

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In this article, we present robust passively mode-locked femtosecond lasers operating at 1030 and approximately 2000 nm, respectively. The all-fiber, all-polarization-maintaining (PM) lasers are mode-locked by a nonlinear amplifying loop mirror (NALM) which is attached to the cavity by a 3×3-coupler. The NALM is phase-biased by the coupler, enabling turn-key operation of the oscillator.

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The possibility to measure the glass transition temperature in poly(methyl methacrylate) (PMMA) films by picosecond ultrasonics with thicknesses ranging from 458 nm to 32 nm is demonstrated. A shift of the longitudinal acoustic eigenmodes towards lower frequencies with temperature is observed accompanied by a change in the temperature-frequency slopes at the glass transition temperature. The contributions to the frequency shift from changes in film thickness and sound velocity are discussed and the latter is extracted below the glass transition temperature.

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Passively Q-switched microchip lasers enable great potential for sophisticated lidar systems due to their compact overall system design, excellent beam quality, and scalable pulse energies. However, many near-infrared solid-state lasers operate at >1000 nm which are not compatible with state-of-the-art silicon detectors. Here we demonstrate a passively Q-switched microchip laser operating at 914 nm.

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