Publications by authors named "T D Dongale"

Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices. Furthermore, they are crucial for applications in the fields of energy, display, healthcare, and soft robotics. Conducting meshes represent a promising alternative to traditional, brittle, metal oxide conductors due to their high electrical conductivity, optical transparency, and enhanced mechanical flexibility.

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The pursuit of advanced brain-inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (SbS) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin-film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of SbS thin films deposited via the vapor transport deposition technique.

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Diminishing the charge recombination rate by improving the photoelectrochemical (PEC) performance of graphitic carbon nitride (g-CN) is essential for better water oxidation. In this concern, this research explores the competent approach to enhance the PEC performance of g-CN nanosheets (NSs), creating their nanocomposites (NCs) with metal-organic framework (MOF)-derived porous CeO nanobars (NBs) along with ZnO nanorods (NRs) and TiO nanoparticles (NPs). The synthesis involved preparing CeO NBs and g-CN NSs through the calcination of respective precursors, while the sol-gel method is employed for ZnO NRs and TiO NPs.

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Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next-generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe HS are explored for nonvolatile memory and neuromorphic-computing applications. Sputter-deposited Ag/GeTe/MoTe/Pt HS cross-point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (V: 0.

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