InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements.

In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm/Vs is observed at electron density in the channel ≈1×10 cm. A comparison with mobility values estimated from transistor characteristics reveals a significant underestimation of mobility which arises from overestimation of channel density obtained from C-V measurements.