Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.

Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions covering cores of dislocations.

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in -Type Si and SiGe Alloys.

Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the -type silicon doped with boron. In this work, minority carrier traps in -type silicon (Si) and silicon-germanium (SiGe) alloys induced by 5.

Study of Radiation-Induced Defects in -Type SiGe Diodes before and after Annealing.

In this work, electrically active defects of pristine and 5.5 MeV electron irradiated -type silicon-germanium (SiGe)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The -type SiGe alloys with slightly different Ge contents were examined.

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors.

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in SiGe structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.

Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation.

Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions.