Electronic Impact of High-Energy Metal Deposition on Ultrathin Oxide Semiconductors.

High-energy metal deposition significantly impacts the performance and reliability of two-dimensional (2D) semiconductors and nanodevices. This study investigates the localized annealing effect in atomically thin InO induced during high-energy metal deposition. The localized heating effect alters the electronic performance of InO devices, especially in shorter channel devices, where heat dissipation is further constrained.

Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors.

The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (V) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range V tunability in ultrathin InO.