AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al Ga O Sidewalls.

AlGaN and GaN sidewalls were turned into Al Ga O and GaO, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized GaO is a single crystal with nanosized voids homogenously distributed inside the layer. Two oxidized Al Ga O layers were observed on the sidewall of the AlGaN layer in transmission electron microscopy images.