In this work, we report on the fabrication of ZnO thin films doped with Ge via the ALD method. With an optimized amount of Ge doping, there was an improvement in the conductivity of the films owing to an increase in the carrier concentration. The optical properties of the films doped with Ge show improved transmittance and reduced reflectance, making them more attractive for opto-electronic applications.
View Article and Find Full Text PDFFormamidinium lead iodide (FAPbI)-based perovskite solar cells have gained immense popularity over the last few years within the perovskite research community due to their incredible opto-electronic properties and the record power conversion efficiencies (PCEs) achieved by the solar cells. However, FAPbI is vulnerable to phase transitions even at room temperature, which cause structural instability and eventual device failure during operation. We performed post-treatment of the FAPbI surface with octyl ammonium iodide (OAI) in order to stabilize the active phase and preserve the crystal structure of FAPbI.
View Article and Find Full Text PDFACS Appl Mater Interfaces
July 2015
The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this contribution, the KCN/KOH chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)2 thin films, is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation of the FF after long treatment time for all Cu-poor CZTSe solar cell samples.
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