Tuning of electron transport layers using MXene/metal-oxide nanocomposites for perovskite solar cells and X-ray detectors.

This work elaborates on the decoration of metal oxides (ZnO and FeO) between MXene sheets for use as the supporting geometry of PCBM electron transport layers (ETLs) in perovskite solar cells and X-ray detectors. The metal oxide supports for carrying the plentiful charge carriers and the hydrophobic nature of MXenes provide an easy charge transfer path through their flakes and a smooth surface for the ETL. The developed interface engineering based on the MXene/ZnO and MXene/FeO hybrid ETL results in improved power conversion efficiencies (PCEs) of 13.

Low-Power Negative-Differential-Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering.

Van der Waals (vdW) heterostructures composed of atomically thin two-dimensional (2D) materials have more potential than conventional metal-oxide semiconductors because of their tunable bandgaps, and sensitivities. The remarkable features of these amazing vdW heterostructures are leading to multi-functional logic devices, atomically thin photodetectors, and negative differential resistance (NDR) Esaki diodes. Here, an atomically thin vdW stacking composed of p-type black arsenic (b-As) and n-type tin disulfide (n-SnS ) to build a type-III (broken gap) heterojunction is introduced, leading to a negative differential resistance device.

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping.

Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate the fabrication and characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent photovoltaic behavior of the n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts the - curves down with positive and negative values of about 0.

Fabrication of High-Performance Solar Cells and X-ray Detectors Using MoX@CNT Nanocomposite-Tuned Perovskite Layers.

The interface design of inorganic and organic halide perovskite-based devices plays an important role to attain high performance. The modification of transport layers (ETL and HTL) or the perovskite layer is given the crucial inspiration to realize superior power conversion efficiencies (PCEs). The highly conducting 2D materials of CNT, graphene/GO, and transition-metal dichalcogenides (TMDs) are suitable substitutes to tune the electronic structure/work function of perovskite devices.

Impact of Molybdenum Dichalcogenides on the Active and Hole-Transport Layers for Perovskite Solar Cells, X-Ray Detectors, and Photodetectors.

The interface architectures of inorganic-organic halide perovskite-based devices play key roles in achieving high performances with these devices. Indeed, the perovskite layer is essential for synergistic interactions with the other practical modules of these devices, such as the hole-/electron-transfer layers. In this work, a heterostructure geometry comprising transition-metal dichalcogenides (TMDs) of molybdenum dichalcogenides (MoX  = MoS , MoSe , and MoTe ) and perovskite- or hole-transfer layers is prepared to achieve improved device characteristics of perovskite solar cells (PSCs), X-ray detectors, and photodetectors.

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO/WTe) Exhibiting Stable Resistive Switching.

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO/WTe) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate.

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction.

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N gas showed n-type doping. The degree of doping increased with DUV exposure time.

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe heterojunction diode.

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias.

Highly Fast Response of Pd/TaO/SiC and Pd/TaO/Si Schottky Diode-Based Hydrogen Sensors.

Herein, the fabrication of a novel highly sensitive and fast hydrogen (H) gas sensor, based on the TaO Schottky diode, is described. First, TaO thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (RF) sputtering method. Then, Pd and Ni are respectively deposited on the front and back of the device.

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection.

2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e.