Novel Boron-Doped p-Type CuO Thin Films as a Hole-Selective Contact in c-Si Solar Cells.

p-type CuO thin films doped with trivalent cation boron are demonstrated for the first time as an efficient hole-selective layer for c-Si heterojunction solar cells. CuO and CuO:B films were deposited by rf magnetron sputtering, and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the CuO film.