Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters.

In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mg-doped AlGaN (UV-A region,∼ 323 nm) nanowire. The Kelvin probe force microscopy was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed.

Ultra high-sensitive, prompt response and recovering Pt/(Pt+SiO ) cermet layer/GaN-based hydrogen sensor for life-saving applications.

In this work, we report an ultra-high sensitive (S = 1.4 × 10%), prompt response and recovering Pt/Pt+SiO cermet layer/GaN-based hydrogen (H) sensor. A sensor fabricated with a 15 nm cermet layer, comprising Pt and SiO, deposited between 15 nm Pt and GaN layers, exhibits significantly enhanced sensitivity in the detection of 4 %H by ≈ 300×, as compared to the reference Pt/GaN sensor at ambient temperature (300 K).

Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime.

Growth of InGaN, having high Indium composition without compromising crystal quality has always been a great challenge to obtain efficient optical devices. In this work, we extensively study the impact of non-radiative defects on optical response of the plasma assisted molecular beam epitaxy (PA-MBE) grown InGaN nanowires, emitting in the higher wavelength regime ([Formula: see text] nm). Our analysis focuses into the effect of defect saturation on the optical output, manifested by photoluminescence (PL) spectroscopy.