Highly Efficient Flexible Roll-to-Roll Organic Photovoltaics Based on Non-Fullerene Acceptors.

The ability of organic photovoltaics (OPVs) to be deposited on flexible substrates by roll-to-roll (R2R) processes is highly attractive for rapid mass production. Many research teams have demonstrated the great potential of flexible OPVs. However, the fabrication of R2R-coated OPVs is quite limited.

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters. Modulation of the NDR is an essential issue for the development of NDR-based devices. In this study, we successfully synthesized graphene oxide quantum dots (GOQDs) using graphene oxide, cysteine, and H2O2.

Correction: Tunnel injection from WS quantum dots to InGaN/GaN quantum wells.

[This corrects the article DOI: 10.1039/C7RA13108A.].

Tunnel injection from WS quantum dots to InGaN/GaN quantum wells.

We propose a tunnel-injection structure, in which WS quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS-QD injector to the InGaN-QW emitter.

Effect of nitrogen doping on the photoluminescence intensity of graphene quantum dots.

We have developed a facile, fast, and one-step synthetic method to prepare graphene quantum dots (GQDs) simultaneously with nitrogen (N) doping via pulsed laser ablation. The N-doped GQDs (N-GQDs) with an average size around 3 nm and an N/C atomic ratio of 33% have been obtained. The N-GQDs emit blue photoluminescence (PL), where the PL intensity enhances as the N doping increases.