Photogating interfacial effects in carbon nanotube-based transistors on a Si/SiO substrate toward highly sensitive photodetection.

Single-walled carbon nanotubes (SWCNTs) are considered to be promising material platforms for various photodetectors (including phototransistors) due to their unique optoelectrical properties (, high mobility and a wide variety of bandgap values). Herein, we present highly sensitive phototransistors which utilised sparse networks of SWCNTs on a silicon/silica substrate and operated by means of the photogating effect. The response of SWCNTs to photo-induced electrostatic charges (photogating effect) was highly dependent on the conductivity type of the channel, which was "metallic" or "semiconducting", depending on the SWCNT density.