A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm.
View Article and Find Full Text PDFA high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz.
View Article and Find Full Text PDFWe report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.
View Article and Find Full Text PDFExperimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.
View Article and Find Full Text PDFJ Opt Soc Am A Opt Image Sci Vis
November 2004
An ultracompact and efficient 1 x 2 splitter for submicrometer silicon-on-insulator rib waveguides using a star coupler is reported. The structure proposed here is decidedly smaller than the usual splitters such as multi-mode interference or Y-branch devices and much less sensitive to technological fluctuations. Design of the compact splitter is optimized at lambda = 1.
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