Ultrasmall and Highly Dispersed Pt Entities Deposited on Mesoporous N-doped Carbon Nanospheres by Pulsed CVD for Improved HER.

Vapor-based deposition techniques are emerging approaches for the design of carbon-supported metal powder electrocatalysts with tailored catalyst entities, sizes, and dispersions. Herein, a pulsed CVD (Pt-pCVD) approach is employed to deposit different Pt entities on mesoporous N-doped carbon (MPNC) nanospheres to design high-performance hydrogen evolution reaction (HER) electrocatalysts. The influence of consecutive precursor pulse number (50-250) and deposition temperature (225-300 °C) are investigated.

Ultrascaled Contacts to Monolayer MoS Field Effect Transistors.

Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length () and contact length (), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS FETs with down to 100 nm and down to 20 nm to evaluate the impact of contact scaling on FET performance.

Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS and fabrication of top-edge hybrid contacts for field-effect transistors.

Metal contacts to two-dimensional layered semiconductors are crucial to the performance of field-effect transistors (FETs) and other applications of layered materials in nanoelectronics and beyond. In this work, the wetting behavior of very thin Au films on exfoliated MoS flakes was studied and evaluated as a nanoscale, self-assembled dry etch mask. Etching nanoscale pits into MoS flakes prior to metallization from the top of the flake forms edge sites that contribute some fraction of edge contacts in addition to top contacts for additional carrier injection and lower contact resistance.

Uncovering the Effects of Metal Contacts on Monolayer MoS.

Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes.

We report on the thermal and thermoelectric properties of individual nanocrystalline Bi Te nanotubes synthesized by the solution phase method using 3ω method and a microfabricated testbench. Measurements show that the nanotubes offer improved ZT compared to bulk BiTe near room temperature due to an enhanced Seebeck coefficient and suppressed thermal conductivity. This improvement in ZT originates from the nanocrystalline nature and low dimensionality of the nanotubes.

Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices.

Controlling the thermal conductivity of semiconductors is of practical interest in optimizing the performance of thermoelectric and phononic devices. The insertion of inclusions of nanometer size in a semiconductor is an effective means of achieving such control; it has been proposed that the thermal conductivity of silicon could be reduced to 1 W/m/K using this approach and that a minimum in the heat conductivity would be reached for some optimal size of the inclusions. Yet the experimental verification of this design rule has been limited.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications.

Cosputtered Calcium Manganese Oxide Electrodes for Water Oxidation.

Calcium manganese oxide films were prepared by cosputter deposition from Mn and CaMnO targets and evaluated for their suitability as catalysts for the oxygen evolution reaction (OER). Scanning electron microscopy (SEM) revealed a compact morphology for the as-deposited films and the formation of nanorodlike features on the surfaces after annealing at 600 °C. X-ray-photoelectron-spectroscopy analysis showed that the surface oxidation state is close to +III (as in MnO) for the as-deposited films and increases slightly to a mixture of III and IV after annealing occurs in dry air at 400-600 °C.

Confined Chemical Fluid Deposition of Ferromagnetic Metalattices.

A magnetic, metallic inverse opal fabricated by infiltration into a silica nanosphere template assembled from spheres with diameters less than 100 nm is an archetypal example of a "metalattice". In traditional quantum confined structures such as dots, wires, and thin films, the physical dynamics in the free dimensions is typically largely decoupled from the behavior in the confining directions. In a metalattice, the confined and extended degrees of freedom cannot be separated.

Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study.

Surfaces of polycrystalline α-GeTe films were studied by X-ray photoelectron spectroscopy (XPS) after different treatments in an effort to understand the effect of premetallization surface treatments on the resistance of Ni-based contacts to GeTe. UV-O is often used to remove organic contaminants after lithography and prior to metallization; therefore, UV-O treatment was used first for 10 min prior to ex situ treatments, which led to oxidation of both Ge and Te to GeO (x < 2) and TeO, respectively. Then the oxides were removed by deionized (DI) HO, (NH)S, and HCl treatments.

Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst.

Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vapor–liquid–solid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2 × 10(20) cm(-3), which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs.

We present in this communication our study of the nonradiative energy transfer between colloidal quantum dot (QD) phosphors and nitride nanopillar light emitting diodes (LEDs). An epitaxial p-i-n InGaN/GaN multiple quantum-well (QW) heterostructure was patterned and dry-etched to form dense arrays of nanopillars using a novel etch mask consisting of self-assembled In3Sn clusters. Colloidal QD phosphors have been deposited into the gaps between the nanopillars, leading to sidewall coupling between the QDs and InGaN QW emitters.

Lasing from colloidal InP/ZnS quantum dots.

High-quality InP/ZnS core-shell nanocrystal quantum dots (NQDs) were synthesized as a heavy-metal-free alternative to the gain media of cadmium-based colloidal nanoparticles. Upon UV excitation, amplified spontaneous emission (ASE) and optical gain were observed, for the first time, in close-packed InP/ZnS core-shell NQDs. The ASE wavelength can be selected by tailoring the nanocrystal size over a broad range of the spectrum.

Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes.

We report in this communication the design and fabrication of solution-processed white light-emitting diodes (LEDs) containing a bilayer of heavy metal-free colloidal quantum dots (QDs) and polymer in the device active region. White electroluminescence was obtained in the LEDs by mixing the red emission of ZnCuInS/ZnS core/shell QDs and the blue-green emission of poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine). A high color rendering index of 92 was achieved as compared to a 5310 K blackbody reference by virtue of broadband emission of the QDs.

Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.

The synthesis of epitaxially oriented Si nanowires at high growth rates (>1 microm/min) was demonstrated on (111) Si substrates using Al as the catalyst. The use of high H(2) and SiH(4) partial pressures was found to be effective at reducing problems associated with Al oxidation and nanowire nucleation, enabling growth of high aspect ratio structures at temperatures ranging from 500 to 600 degrees C with minimal tapering of the diameter. Because of the high growth rate observed, the Al catalyst is believed to be in the liquid state during the growth.

In situ axially doped n-channel silicon nanowire field-effect transistors.

Axially doped (n+-p--n+) silicon nanowires were synthesized using the vapor-liquid-solid technique by sequentially modulating the introduction of phosphine to the inlet gas stream during growth from a silane source gas. Top-gate and wrap-around-gate metal oxide semiconductor field-effect transistors that were fabricated after thermal oxidation of the silicon nanowires operate by electron inversion of the p- body segment and have significantly higher on-state current and on-to-off state current ratios than do uniformly p- -doped nanowire field-effect devices. The effective electron mobility of the devices was estimated using a four-point top-gate structure that excludes the source and drain contact resistance and was found to follow the expected universal inversion layer mobility versus effective electric field trend.

Two-photon-pumped lasing from colloidal nanocrystal quantum dots.

Upconverted lasing in the nonlinear, two-photon absorption regime has been demonstrated, for the first time to the best of our knowledge in colloidal nanocrystal quantum dots (NQDs). Upon pulse excitation at sub-bandgap photon energies the radiative recombination of excitons in close-packed CdSe/CdS/ZnS core-shell NQDs was found to be sufficiently fast to compete with the intrinsic nonradiative Auger recombination, as confirmed by the presence of a fast decay (approximately 7 ps) in the time-resolved photoluminescence.

Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots.

We report a multilayer solution-processed blue light-emitting diode based on colloidal core/shell CdS/ZnS nanocrystal quantum dots (QDs). At a low-operating voltage of 5.5 V, the device emits spectrally pure blue radiation at 460 nm with a narrow full-width-at-half-maximum bandwidth of 20 nm and high brightness up to 1600 cd/m2.

Selective plating for junction delineation in silicon nanowires.

The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

Silicidation of silicon nanowires by platinum.

The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing Pt on Si nanowires from 250 to 700 degrees C, and the reaction products were characterized by transmission electron microscopy.