Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C.

A family of heteroleptic titanium guanidinates: synthesis, thermolysis, and surface reactivity.

A family of new mixed-ligand titanium guanidinate compounds was synthesized as potential atomic layer deposition precursors, and the surface chemistry on silica of a promising candidate (Cp(2)Ti[(N(i)Pr)(2)CN(H)(i)Pr]) was explored. Generally, these compounds have very good thermal stability with onsets of volatility between 127 and 168 degrees C, with melting points generally ranging from 147 to 165 degrees C. The reactivity of [(i)PrN(H)C(N(i)Pr)(2)]TiCp(2) was studied with high surface area silica between 180 and 330 degrees C.