High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area.

We propose a new drain-extended FinFET (DeFinFET) that can improve the intrinsic gain (g/g) and the electrical safe operating area (SOA). This structure features a novel utilization of the drain potential by using a floating poly (FP) and split high-k material (HK) on the drain and drift regions. This method effectively controls the potential drop profile within the drift region, which makes a uniform electric field distribution in the gate-on state.