Publications by authors named "Susumu Noda"

We present a continuative definition of topological charge to depict the polarization defects on any resonant diffraction orders in photonic crystal slab regardless they are radiative or evanescent. By using such a generalized definition, we investigate the origins and conservation of polarization defects across the whole Brillouin zone. We found that the mode crossings due to Brillouin zone folding contribute to the emergence of polarization defects in the entire Brillouin zone.

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Article Synopsis
  • The text discusses a new method for non-dispersive infrared (NDIR) sensing that uses stacked, electrically controllable bandpass filters made from multiple quantum wells (MQWs) and photonic crystals.
  • By designing these components correctly, the filters can independently control the light transmission at two specific wavenumbers (1035 cm and 1085 cm) with high efficiency.
  • Additionally, the stacked filters enable a mechanical-chopper-free NDIR system with a single detector, allowing effective gas concentration measurements despite variations in optical power reaching the detector.
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We demonstrate high-output-power and high-efficiency operation of 1.3-µm-wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). By introducing a metal reflector and adjusting the phase of the reflected light via optimization of the thickness of the p-InP cladding layer, we successfully achieve an output power of approximately 400 mW with the slope efficiency of 0.

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Article Synopsis
  • Researchers have created photonic-crystal surface-emitting lasers that use spatial phase plates (SPPs) to generate optical vortex beams with specific phase rotations.
  • The lasers can produce high output power (around 5 W) and maintain high mode purities (85%, 78%, and 72% for vortex numbers l = 1-3), making them efficient in delivering focused light.
  • These advanced OVB sources have potential applications in material processing, optical manipulation, and microscopy.
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Here, we report on the increase of the quality-factors of photonic crystal nanocavities fabricated by a CMOS-compatible process. We fabricated nanocavities with the same cavity design but used either a binary photomask or a phase-shift photomask in the photolithography step to assess the impact of the photomask-type on the fabrication accuracy of the air holes. We characterized 62 cavities using time-resolved measurements and the best cavity had a quality-factor of 6.

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Short-pulse high-peak-power lasers are crucial laser sources for various applications such as non-thermal ultrafine material processing and eye-safe high-resolution remote sensing. Realizing such operation in a single semiconductor laser chip without amplifiers or external resonators is expected to contribute to the development of compact, affordable laser sources for such applications. In this paper, we demonstrate short-pulse high-peak-power photonic-crystal surface-emitting lasers based on simultaneous absorptive and radiative Q-switching.

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Realizing large-scale single-mode, high-power, high-beam-quality semiconductor lasers, which rival (or even replace) bulky gas and solid-state lasers, is one of the ultimate goals of photonics and laser physics. Conventional high-power semiconductor lasers, however, inevitably suffer from poor beam quality owing to the onset of many-mode oscillation, and, moreover, the oscillation is destabilized by disruptive thermal effects under continuous-wave (CW) operation. Here, we surmount these challenges by developing large-scale photonic-crystal surface-emitting lasers with controlled Hermitian and non-Hermitian couplings inside the photonic crystal and a pre-installed spatial distribution of the lattice constant, which maintains these couplings even under CW conditions.

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It is known that the quality factors (Q) of photonic crystal nanocavities vary from sample to sample due to air-hole fabrication fluctuations. In other words, for the mass production of a cavity with a given design, we need to consider that the Q can vary significantly. So far, we have studied the sample-to-sample variation in Q for symmetric nanocavity designs, that is, nanocavity designs where the positions of the holes maintain mirror symmetry with respect to both symmetry axes of the nanocavity.

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A Raman nanocavity laser can emit light into free space and into a properly designed waveguide adjacent to the cavity by mode coupling. In common device designs, the emission from the edge of this waveguide is relatively weak. However, a Raman silicon nanocavity laser with strong emission from the waveguide edge would be advantageous for certain applications.

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Unidirectional guided resonances (UGRs) are optical modes in photonic crystal slabs that radiate toward one side without the need for mirrors on the other. In this Letter, we report a mechanism to realize UGRs by tuning the interband coupling effect originating from up-down symmetry breaking. We theoretically find that UGRs that reside along high-symmetric lines correspond to phase singularities of far-field radiation, depicted by phase winding numbers as a type of topological indices.

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Ultrafast dynamics in nanophotonic materials is attracting increasing attention from the perspective of exploring new physics in fundamental science and expanding functionalities in various photonic devices. In general, such dynamics is induced by external stimuli such as optical pumping or voltage application, which becomes more difficult as the optical power to be controlled becomes larger owing to the increase in the energy required for the external control. Here, we demonstrate a concept of the self-evolving photonic crystal, where the spatial profile of the photonic band is dynamically changed through carrier-photon interactions only by injecting continuous uniform current.

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Photonic-crystal surface-emitting lasers (PCSELs), which utilize a two-dimensional (2D) optical resonance inside a photonic crystal for lasing, feature various outstanding functionalities such as single-mode high-power operation and arbitrary control of beam polarizations. Although most of the previous designs of PCSELs employ spatially uniform photonic crystals, it is expected that lasing performance can be further improved if it becomes possible to optimize the spatial distribution of photonic crystals. In this paper, we investigate the structural optimization of PCSELs via quantum annealing towards high-power, narrow-beam-divergence operation with linear polarization.

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We demonstrate high-power continuous-wave (CW) lasing oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). Single-mode operation with an output power of over 100 mW, a side-mode suppression ratio (SMSR) of over 50 dB, and a narrow single-lobe beam with a divergence angle of below 1.

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Flash light sources with a wide field of view (FOV) are indispensable in various fields such as light detection and ranging (LiDAR), optical wireless communication, and adaptive lighting. However, conventional flash light sources, which combine lasers with external optical elements, tend to suffer from high complexity, large size, and high cost. In this study, we investigate a new wide-FOV flash light source which does not require external optical elements, based on a dually modulated photonic crystal surface-emitting laser (PCSEL).

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Realization of one-chip, ultra-large-area, coherent semiconductor lasers has been one of the ultimate goals of laser physics and photonics for decades. Surface-emitting lasers with two-dimensional photonic crystal resonators, referred to as photonic-crystal surface-emitting lasers (PCSELs), are expected to show promise for this purpose. However, neither the general conditions nor the concrete photonic crystal structures to realize 100-W-to-1-kW-class single-mode operation in PCSELs have yet to be clarified.

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We develop a self-consistent theoretical model for simulating the lasing characteristics of photonic-crystal surface-emitting lasers (PCSELs) under continuous-wave (CW) operation that takes into account thermal effects caused by current injection. Our model enables us to analyze the lasing characteristics of PCSELs under CW operation by solving self-consistently the changes in the in-plane optical gain and refractive index distribution, which is associated with heat generation and temperature rise, and the change in the oscillation modes. We reveal that the lasing band-edge selectivity and beam quality of the PCSELs are affected by the spatial distribution of the band-edge frequency of the photonic crystal formed by the refractive index distribution, which depends on the temperature distribution in the resonator.

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Nanocavity devices based on silicon that can operate in the 1.2-µm band would be beneficial for several applications. We fabricate fifteen cavities with resonance wavelengths between 1.

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Raman silicon lasers based on photonic crystal nanocavities with a threshold of several hundred microwatts for continuous-wave lasing have been realized. In particular, the threshold depends on the degree of confinement of the excitation light and the Raman scattering light in the two nanocavity modes. Here, we report lower threshold values for Raman silicon nanocavity lasers achieved by increasing the quality (Q) factors of the two cavity modes.

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The performance of a Raman silicon laser based on a high quality-factor nanocavity depends on the degree of free-carrier absorption, and this characteristic may be useful for certain applications. Here we demonstrate that laser oscillation in a Raman silicon nanocavity laser stops abruptly after an exposure to a weak flux of negatively ionized air for a few seconds. Spectral measurements reveal that the laser interruption is mainly caused by the transfer of extra electrons from the negatively ionized air molecules to the silicon nanocavity.

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Near-field thermophotovoltaic (TPV) power generation has been attracting increasing attention as a promising approach for efficient conversion of heat into electricity with high output power density. Here, we numerically investigate near-field TPV devices with surrounding reflectors for efficient recycling of low-energy photons, which do not contribute to the power generation. We reveal that the conversion efficiency of a near-field TPV system can be drastically increased by introducing a pair of reflectors above and below the system, especially when the two mirrors are not in contact with the emitter and absorber.

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We report on electrically driven InP-based photonic-crystal surface-emitting lasers (PCSELs), which possess a deep-air-hole photonic crystal (PC) structure underneath an active region formed by metal-organic vapor-phase-epitaxial (MOVPE) regrowth. Single-mode continuous-wave (CW) lasing operation in 1.3-μm wavelength is successfully achieved at a temperature of 15°C.

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Mechanical-free, high-power, high-beam-quality two-dimensional (2D) beam scanning lasers are in high demand for various applications including sensing systems for smart mobility, object recognition systems, and adaptive illuminations. Here, we propose and demonstrate the concept of dually modulated photonic crystals to realize such lasers, wherein the positions and sizes of the photonic-crystal lattice points are modulated simultaneously. We show using nano-antenna theory that this photonic nanostructure is essential to realize 2D beam scanning lasers with high output power and high beam quality.

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Modulated photonic-crystal lasers can control the output beam direction two-dimensionally by exciting a two-dimensional cavity mode at the non-diffractive photonic band-edge and diffracting the mode upwards with position modulation of each air hole. In these lasers, the position modulation can be introduced one-directionally, where the modulation is given by the distances between the air holes, or two-directionally, where the modulation is given by the rotation angles of the air holes. For one-directional position modulation, we show that the polarization of output beams is perpendicular to the direction of modulation.

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Thermal radiation transfer between two objects separated by a subwavelength gap (near-field thermal radiation transfer) can be orders of magnitude larger than that in free space, which is attracting increasing attention with respect to both fundamental nanoscience and its potential for high-power-density and high-efficiency conversion of heat to electricity in thermophotovoltaic (TPV) systems. However, the realization of near-field thermal radiation transfer in TPV systems involves significant challenges because it requires a subwavelength gap and large temperature difference between the emitter and the PV cell while minimizing the heat transfer that does not contribute to the photocurrent generation. To overcome these challenges, here we demonstrate a one-chip near-field TPV device consisting of a thin-film Si emitter and InGaAs PV cell with an intermediate Si substrate, which enables the suppression of the heat transfer due to sub-bandgap radiation by free carriers and surface modes.

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An optical vortex beam possesses a phase singularity that causes a null intensity at the center of the beam, and can be explained as a superposition of a phase distribution along the azimuthal direction and a plane wave. Here, we process the surface of a photonic-crystal surface-emitting laser (PCSEL) to generate an optical vortex beam. By using an eight-segmented phase plate fabricated via three chemical etching steps, a beam having null intensity is obtained.

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